PART |
Description |
Maker |
IRF220-223 IRF221 IRF222 IRF223 IRF621 IRF623 IRF2 |
N-Channel Power MOSFETs 7A 150-200V N-Channel Power MOSFETs, 7A, 150-200V N-Channel Power MOSFETs/ 7A/ 150-200V
|
FAIRCHILD[Fairchild Semiconductor]
|
MBRD10150CT |
10 Amp Schottky Rectifier 150~200V
|
Micro Commercial Compon...
|
IRFI9630G IRFI9630GPBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-4.3A) Power MOSFET(Vdss=-200V/ Rds(on)=0.80ohm/ Id=-4.3A)
|
IRF[International Rectifier]
|
IRF640S |
N-CHANNEL 200V - 0.150 OHM -18A TO-263 MESH OVERLAY MOSFET
|
ST Microelectronics
|
IRFD9210 |
-200V Single P-Channel HEXFET Power MOSFET in a HEXDIP package Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-0.40A)
|
International Rectifier
|
MID-13A45 13A45 UNITYOPTOTECHNOLOGY-MID-13A45 |
SIDE LOOK PACKAGE NPN PHOTOTRSNSISTOR Two-Bit Phototransistors RECTIFIER BRIDGE 10A 200V 150A-ifsm 1.1V-vf 10uA-ir PBPC8 150/BOX
|
UOT[Unity Opto Technology]
|
IRFB31N20D IRFS31N20DTRL |
Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A) TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五(巴西)直|1A条(丁)|63AB Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)最大值\u003d 0.082ohm,身份证\u003d 31A条)
|
International Rectifier, Corp.
|
MRF6S9060NR1 MRF6S9060MR1 MRF6S9060NBR1 MRF6S9060M |
RF Power Field Effect Transistors CAP 10PF 200V 200V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014 CAP CER .10UF 100V 20% AXIAL
|
Freescale (Motorola) 飞思卡尔半导体(中国)有限公司
|
MJH11020 |
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS
|
Motorola, Inc
|